cha7215 rohs compliant ref : dscha72159287 - 14 oct 09 1/8 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 x-band high power amplifier gaas monolithic microwave ic description the cha7215 is a monolithic three-stage gaas high power amplifier designed for x band applications. the hpa provides typically 9w output power associated to 35% power added efficiency at 4dbc and a high robustness on mismatch load. this device is manufactured using 0.25 m power phemt process, including, via holes through the substrate and air bridges. main features 0.25 m power phemt technology frequency band: 8.5 C 11.5ghz output power: 39.5dbm at saturation high linear gain: 28db power added efficiency: 34% @4dbc quiescent bias point: vd=8v, id=2.3a chip size : 5 x 3.31 x 0.07mm output power versus frequency @pin=19dbm 35 35,5 36 36,5 37 37,5 38 38,5 39 39,5 40 40,5 41 8 8,5 9 9,5 10 10,5 11 11,5 12 frequency (ghz) o u t p u t p o w e r ( d b m ) temp=-40c temp=+20c temp=+80c main characteristics vd=8v, id (quiescent) = 2.3a, drain pulse width = 2 5s, duty cycle = 10% symbol parameter min typ max unit top operating temperature range -40 +80 c fop operating frequency range 8.5 11.5 ghz pae_4dbc power added efficiency @4dbc @ 20c 34 % psat saturated output power @ 20c 39.5 dbm g small signal gain @ 20c 25 28 31 db esd protections: electrostatic discharge sensitive device. observe handling precautions! in out vg1r vg2r vg3r vd1 vd1 vd2 vd3 vd2 vd3 vg3r in out vg1r vg2r vg3r vd1 vd1 vd2 vd3 vd2 vd3 vg3r
cha7215 x-band high power amplifier ref : dscha72159287 - 14 oct 09 2/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics on test fixture tamb = 20c, vd=8v, id (quiescent) = 2.3a, drain pu lse width = 25s, duty cycle = 10% symbol parameter min typ max unit fop operating frequency 8.5 11.5 ghz g small signal gain 25 28 31 db g_t small signal gain variation versus temperature -0.05 db/c rlin input return loss 10 db rlout output return loss 12 db psat saturated output power 39.5 dbm psat_t saturated output power variation versus temperature -0.01 db/c pae_4dbc power added efficiency @4dbc 34 % id_4dbc supply drain current @ 4dbc 3.3 4.4 a vd1, vd2, vd3 drain supply voltage (2) 8 v id supply quiescent current (1) 2.3 a vg1, vg2, vg3 gate supply voltage -2.2 v (1) parameter can be adjusted by tuning of vg. (2) 0.5v variation on vd leads to around 0.4db vari ation of the output power (impact on robustness see maximum ratings) absolute maximum ratings (1) tamb = 20c symbol parameter values unit cmp compression level (2) 6 dbc vd supply voltage with rf input power 9 v vd supply voltage without rf input power 10 v id supply quiescent current 3 a id_sat supply current in saturation 4.8 a vg supply voltage -1.1 v tj maximum junction temperature 175 c tstg storage temperature range -55 to +125 c top operating temperature range -40 to +80 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) for higher compression the level limit can be i ncreased by decreasing the voltage vd using the rate 0.5 v / dbc
x-band high power amplifier cha7215 ref : dscha72159287 - 14 oct 09 3/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical measured characteristics measurements on jig : vd=8v, id (quiescent) = 2.3a, drain pulse width = 2 5s, duty cycle = 10% 18 20 22 24 26 28 30 32 34 36 38 8 8,5 9 9,5 10 10,5 11 11,5 12 frequency (ghz) linear gain (db) temp=-40c temp=+20c temp=+80c linear gain versus frequency and temperature 16 18 20 22 24 26 28 30 32 34 36 38 40 42 0 2 4 6 8 10 12 14 16 18 20 input power (dbm) linear gain (db) & output power (dbm) @10ghz temp=-40c temp=+20c temp=+80c temp=-40c temp=+20c temp=+80c pout gain linear gain and output power @freq=10ghz versus input power and temperature
cha7215 x-band high power amplifier ref : dscha72159287 - 14 oct 09 4/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 34 34,5 35 35,5 36 36,5 37 37,5 38 38,5 39 39,5 40 40,5 41 8 8,5 9 9,5 10 10,5 11 11,5 12 frequency (ghz) output power @ pin=17dbm (dbm) temp=-40c temp=+20c temp=+80c output power @pin=17dbm versus frequency and temper ature 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 8 8,5 9 9,5 10 10,5 11 11,5 12 frequency (ghz) id @pin=17dbm (a) temp=-40c temp=+20c temp=+80c id @pin=17dbm versus frequency and temperature
x-band high power amplifier cha7215 ref : dscha72159287 - 14 oct 09 5/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 0 5 10 15 20 25 30 35 40 45 50 8 8,5 9 9,5 10 10,5 11 11,5 12 frequency (ghz) pae @pin=17dbm (%) temp=-40c temp=+20c temp=+80c pae @pin=17dbm versus frequency and temperature
cha7215 x-band high power amplifier ref : dscha72159287 - 14 oct 09 6/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip mechanical data and pin references 3 310 5 000 000 000 120 105 105 3 205 3 205 810 1 210 1 610 2 010 4 500 810 1 210 1 410 1 610 2 010 4 885 1 655 4 500 610 2 440 2 440 1 855 1 655 1 855 210 410 610 210 410 1 010 1 810 1 010 1 410 4 845 4 845 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 1 3 310 5 000 000 000 120 105 105 3 205 3 205 810 1 210 1 610 2 010 4 500 810 1 210 1 410 1 610 2 010 4 885 1 655 4 500 610 2 440 2 440 1 855 1 655 1 855 210 410 610 210 410 1 010 1 810 1 010 1 410 4 845 4 845 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 1 3 310 5 000 000 000 120 105 105 3 205 3 205 810 1 210 1 610 2 010 4 500 810 1 210 1 410 1 610 2 010 4 885 1 655 4 500 610 2 440 2 440 1 855 1 655 1 855 210 410 610 210 410 1 010 1 810 1 010 1 410 4 845 4 845 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 1 chip thickness = 70m +/- 10 m rf pads (1, 15) = (122 x 200) m2 dc pads (2 to 12, 14, 16, 18 to 28) = (100 x 100) m2 dc pads (13, 17) = (186 x 100) m2 pin number pin name description 1, 15 in / out input / output rf 3, 8, 12, 18 gir gate supply voltage 4, 6, 10, 14, 16, 20, 24, 26 m ground (not connecte d) 5, 9, 13, 17, 21, 25 di drain supply voltage 2, 7, 11, 19, 22, 23, 27, 28 gi / gir not connected
x-band high power amplifier cha7215 ref : dscha72159287 - 14 oct 09 7/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 bonding recommendations port connection external capacitor in inductance (lbonding) = 0.35nh 2 gold wires with diameter of 25 m (600m max) out inductance (lbonding) = 0.35nh 2 gold wires with diameter of 25 m (600m max) vg inductance 1nh c1 ~ 100pf c2 ~ 10nf vd inductance 1nh c1 ~ 100pf assembly recommendations in test fixture recommended esd management refer to the application note an0020 available at http://www.ums-gaas.com for esd sensitivity and handling recommendations for the um s products. vg vd c1=100pf c2=10nf non capacitive pad vd vg vg vd c1=100pf c2=10nf non capacitive pad vd vg vg vd c1=100pf c2=10nf non capacitive pad vd vg vg vd c1=100pf c2=10nf non capacitive pad vd vg
cha7215 x-band high power amplifier ref : dscha72159287 - 14 oct 09 8/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 ordering information chip form : cha7215-99f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.
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